TSG15N120cn n-channel igbt with frd. 1/9 version: b12 to - 3p n product summary v ces (v) v ges (v) i c (a) 1200 20 15 general description the TSG15N120cn using proprietary trench design and advanced npt technology, the 1200v npt igbt offers superior conduction and switching performances, hig h avalanche ruggedness and easy parallel operation. this device is well suited for the resonant or soft swit ching application such as induction heating, microw ave oven, etc. features 1200v npt trench technology high speed switching low conduction loss block diagram npt trench igbt ordering information part no. package packing TSG15N120cn c0 to-3pn 30pcs / tube absolute maximum rating (t a =25 o c unless otherwise noted) parameter symbol limit unit collector-emitter voltage v ces 1200 v gate-emitter voltage v ges 20 v continuous current t c =25 o c i c 30 a t c =100 o c 15 a pulsed collector current * i cm 45 a diode forward current (t c =100 ) i f 15 a diode pulse forward current i fm 45 a max power dissipation t j =25 o c p d 184 w t j =100 o c 74 operating junction temperature t j -55 to +150 oc storage temperature range t stg -55 to +150 o c * repetitive rating: pulse width limited by max. ju nction temperature pin definition : 1. gate 2. collector 3. emitter
TSG15N120cn n-channel igbt with frd. 2/9 version: b12 thermal performance parameter symbol limit unit thermal resistance - junction to case igbt r ? jc 0.68 o c/w diode 3.7 thermal resistance - junction to ambient r ? ja 40 electrical specifications (tc=25 o c unless otherwise noted) parameter conditions symbol min typ max unit static collector-emitter breakdown voltage v ge = 0v, i c = 1ma bv ces 1200 -- -- v zero gate voltage collector current v ce = 1200v, v ge = 0v i ces -- -- 1 ma gate-emitter leakage current v ge = 20v, v ce = 0v i ges -- -- 250 na gate-emitter threshold voltage v ge = v ce , i c = 15ma v ge(th) 3.0 5.0 7.0 v collector-emitter saturation voltage v ge = 15v,i c =15a, t j =25oc v ce(sat) -- 1.9 -- v v ge = 15v,i c =15a, t j =125oc v ce(sat) -- 2.2 -- v dynamic input capacitance v ce = 30v, v ge = 0v, f = 1.0mhz c ies -- 2650 -- pf output capacitance c oes -- 150 -- reverse transfer capacitance c res -- 96 -- switching turn-on delay time v cc = 600v, i c = 15a, r g = 10 ? , v ge = 15v inductive load, t j =25 o c t d(on) -- 34 -- ns rise time t r -- 106 -- turn-off delay time t d(off) -- 192 -- fall time t f -- 94 -- turn-on switching loss e on -- 2.10 -- mj turn-off switching loss e off -- 0.54 -- total switching loss e ts -- 2.64 -- turn-on delay time v cc = 600v, i c = 15a, r g = 10 ? , v ge = 15v inductive load, t j =125 o c t d(on) -- 31 -- ns rise time t r -- 107 -- turn-off delay time t d(off) -- 204 -- fall time t f -- 86 -- turn-on switching loss e on -- 2.20 -- mj turn-off switching loss e off -- 0.93 -- total switching loss e ts -- 3.13 -- total gate charge v cc = 600v, i c = 15a, v ge = 15v q g -- 110 -- nc gate-emitter charge q ge -- 15 -- gate-collector charge q gc -- 40 --
TSG15N120cn n-channel igbt with frd. 3/9 version: b12 electrical specifications of the diode (tc=25 o c unless otherwise noted) parameter conditions symbol min typ max unit diode forward voltage i f = 15a, t j =25 o c v fm -- 2.0 -- v t j =125 o c -- 2.2 -- v reverse recovery time i f = 15a, dl/dt=200a/us t j =25 o c t fr -- 200 -- ns t j =125 o c -- 270 -- reverse recovery current t j =25 o c i fr -- 22 -- a t j =125 o c -- 28 -- reverse recovery charge t j =25 o c q fr -- 2230 -- nc t j =125 o c -- 3750 --
TSG15N120cn n-channel igbt with frd. 4/9 version: b12 electrical characteristics curve (tc = 25 o c, unless otherwise noted) output characteristics saturation voltage characteristics saturation voltage vs. collector current saturation voltage vs. gate bias saturation voltage vs. gate bias capacitance characteristics
TSG15N120cn n-channel igbt with frd. 5/9 version: b12 electrical characteristics curve (ta = 25 o c, unless otherwise noted) turn on time vs. gate resistance turn off time vs. gate resistance switching loss vs. gate resistance turn on time vs. collector current turn off time vs. collector current switching loss vs. collector current
TSG15N120cn n-channel igbt with frd. 6/9 version: b12 electrical characteristics curve (tc = 25 o c, unless otherwise noted) gate charge characteristics soa characteristics rbsoa conduction characteristics reverse recovery current vs. forward current stored recovery charge vs. forward current
TSG15N120cn n-channel igbt with frd. 7/9 version: b12 electrical characteristics curve (ta = 25 o c, unless otherwise noted) reverse recovery time vs. forward current normalized thermal transient impedance, junction-to -ambient
TSG15N120cn n-channel igbt with frd. 8/9 version: b12 to-3pn mechanical drawing unit: millimeters
TSG15N120cn n-channel igbt with frd. 9/9 version: b12 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any erro rs or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tscs terms and co nditions of sale for such products, tsc assumes no liability wh atsoever, and disclaims any express or implied warr anty, relating to sale and/or use of tsc products includi ng liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, cop yright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applica tions. customers using or selling these products for use i n such applications do so at their own risk and agr ee to fully indemnify tsc for any damages resulting from such i mproper use or sale.
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